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二氯化鐵晶體（99.995%） FeCl2 晶體類型：合成 晶體純度：＞99.995% 低維材料最新層狀過渡金屬化合物材料，新增材料：FeCl2,NbS3,GaTeI,InSe,CuInP2S6,WSSe,Fe3GeTe2,NiI2,FePS3,MnPSe3,MnPS3,NiPS3,PdSe2 具體請咨詢在線客服

二碘化鎳晶體（99.995%） NiI2 晶體類型：合成 晶體純度：＞99.995% 低維材料最新層狀過渡金屬化合物材料，新增材料：FeCl2,NbS3,GaTeI,InSe,CuInP2S6,WSSe,Fe3GeTe2,NiI2,FePS3,MnPSe3,MnPS3,NiPS3,PdSe2 具體請咨詢在線客服

碘化鎵（碲摻雜）晶體（99.995%） GaTeI 晶體類型：合成 晶體純度：＞99.995% 低維材料最新層狀過渡金屬化合物材料，新增材料： FeCl2,NbS3,GaTeI,InSe,CuInP2S6,WSSe,Fe3GeTe2,NiI2,FePS3,MnPSe3,MnPS3,NiPS3,PdSe2 具體請咨詢在線客服

Titanium bromide (TiBr3) is a 2D antiferromagnetic / ferromagnetic semiconductor. Crystals exhibit perfect 0001 plane orientation as well as perfect in-plane crystallinity as evidenced by XRD

The first and only commercially available Mg(OH)? crystals were grown using float zone synthesis technique to yield perfectly layered, large size

CdI? is a layered semiconductor with indirect gap at 3.0 eV for bulk and its properties in the monolayer form is currently unknown. It crystallizes in generally known as CdI2 crystal structure as show