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GaSSe 硒化硫鎵晶體

The only commercially available GaSSe alloys: Bulk Gallium sulfide selenide alloys exhibit band gaps ranging from 2.0 eV (GaSe) t0 2.6 eV (GaS) mostly covering the UV band gap ranges. Crystals are per

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n-type WSe2 crystals N型二硒化鎢晶體

14 years of growth optimization lead to our flawless n-type WSe2 crystals through Au or Re doping: They are simply treated as gold standards in 2D materials field.

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WSSe 硒化硫鎢晶體

Our WSSe alloys with the chemical formula WS2xSe2(1-x) crystals perfectly crystallize in 2H phase and come at different alloy ratios x.

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ZrSe2 二硒化鋯晶體 2

ZrSe2 belongs to group-IV TMDCs family and adopts a stable 2H-hexagonal structure. ZrSe2 is 0.95 eV indirect gap semiconductor in the bulk form.

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TlGaSe2 硒化鎵Tuo晶體

The only commercially available TlGaSe2 vdW crystals have been synthesized at our facilities through float zone technique. TlGaSe2 semiconductors belong to the thallium chalcogenides family with the

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PdSe2 crystals 二硒化鈀晶體

Bulk PdSe2 (palladium diselenide) has been predicted to exhivit 30 meV band gap which increases to 1.43 eV indirect gap (theoretical).

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